Micron is sampling 128 GB DDR5 memory modules, the company said at its earnings call this week. The modules are based on the company's latest single die, non-stacked 32 Gb DDR5 memory devices, which the company announced earlier this summer and which will eventually open doors for 1 TB memory modules for servers.

"We expanded our high-capacity D5 DRAM module portfolio with a monolithic die-based 128 GB module, and we have started shipping samples to customers to help support their AI application needs," said Sanjay Mehrotra, president and chief executive of Micron. "We expect revenue from this product in Q2 of calendar 2024."

Micron's 32 Gb DDR5 dies are made on the company's 1β (1-beta) manufacturing process, which is the last production node that solely relies on multi-patterning using deep ultraviolet (DUV) lithography and does not use extreme ultraviolet (EUV) lithography tools. This is all that we know about Micron's 32 Gb DDR5 ICs at this point, though: the company does not disclose its maximum speed bin, though we can expect a drop in power consumption compared to two 16 Gb DDR5 ICs operating at the same voltage and data transfer rate.

Micron's new 32 Gb memory chips pave the way for creating a standard 32 GB module for personal computers with just eight individual memory chips and a server-oriented 128 GB module based on 32 of such ICs. Moreover, these chips make producing memory modules with a 1 TB capacity feasible, deemed unattainable today. These 1 TB modules might seem excessive for now, but they benefit fields like artificial intelligence, Big Data, and server databases. Such modules can enable servers to support up to 12 TB of DDR5 memory per socket (in the case of a 12-channel memory subsystem).

Speaking of DDR5 memory in general, it is noteworthy that the company expects that its bit production of DDR5 will exceed that of DDR4 in early 2024, placing it a bit ahead of the industry.

"Micron also has a strong position in the industry transition to D5," said Mehrotra. "We expect Micron D5 volume to cross over D4 in early calendar 2024, ahead of the industry."

Source: Micron



View All Comments

  • dwillmore - Thursday, September 28, 2023 - link

    Do the continued references to "monolithic dies" mean? As opposed to maybe a stacked die setup? Thanks. Reply
  • FWhitTrampoline - Thursday, September 28, 2023 - link

    Yes that wording and usage there is odd as maybe that should be planar as opposed to 3D/3D stacked. Reply
  • dwillmore - Thursday, September 28, 2023 - link

    Thank you. Reply
  • FWhitTrampoline - Thursday, September 28, 2023 - link

    Just so you Know ASML has a backlog of DUV machine orders to fill just like it still has a backlog of EUV orders. But EUV replaces many DUV steps with a single EUV step so EUV reduces the wafer started to wafer completed timeline and thus increases productivity. And can we get a 1β (1-beta) manufacturing process to nanometer processor translation there to reduce the Marketing Obfuscation. Reply
  • dotjaz - Thursday, September 28, 2023 - link

    It's 12nm-class. 1β is the 5th D1* node and it started with 18. Your choice of numbers are quite limited since there will be a 1γ. Reply
  • GreenReaper - Friday, September 29, 2023 - link

    64GB ought to be enough for anybody! Reply
  • atragorn - Friday, September 29, 2023 - link

    640kb should be enough ! Reply
  • torbendalum - Tuesday, October 3, 2023 - link

    Wrong, where I work our Database servers have 8TB Ram each and they need it. Reply
  • kobblestown - Wednesday, October 4, 2023 - link

    "64GB ought to be enough for anybody!"

    Only if it's on a single module and I have at least 4 memory channels :D

Log in

Don't have an account? Sign up now